压电响应力显微镜

Correlation between the Dimensions and Piezoelectric Properties of ZnO Nanowires Grown by PLI-MOCVD with Different Flow Rates

Figure 6 from Quang Chieu Bui et al “Correlation between the Dimensions and Piezoelectric Properties of ZnO Nanowires Grown by PLI-MOCVD with Different Flow Rates”: Topography, piezoelectric amplitude, and piezoelectric phase of ZnO NW arrays grown by PLI-MOCVD with the (a–c) 100, (d–f) 300, (g–i) 500, and (j–l) 700 sccm O2 gas flow rate for a given DEZn solution flow rate of 0.5 g/min, or with the (m–o) 0.2, (p–r) 0.3, and (s–u) 0.4 g/min DEZn solution flow rate for a given O2 gas flow rate of 500 sccm. NANOSENSORS Platinum-Silicide PtSi-NCH conductive and wear-resistant AFM probes were used to analyze the piezoelectric properties of ZnO NWs

Zinc oxide nanowires (ZnO NWs) have gained considerable attention in the field of piezoelectricity in the past two decades. However, the impact of growth-process conditions… Read More »Correlation between the Dimensions and Piezoelectric Properties of ZnO Nanowires Grown by PLI-MOCVD with Different Flow Rates

Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6

Fig. 2 from “Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6” by Xiaolei Wang et al.: Electrical measurements of the AFE CCPS indicating local FE polarization and electrical anisotropy. a Phase vs voltage hysteresis loop of CCPS crystal bulk obtained at T = 2 K by PFM, after subtracting the built-in electric field between the sample and substrate. The upper inset diagram indicates the atomic structure of electric field (E) driven FE polarized state. b The microscope picture of our CCPS device with identified a and b axes, along with the scale-up configuration of electrical measurements on the right. c The rectifying J–V characteristics along the a and b axes as positive +10 V bias is poling for 3 min. d The rectification behaviors as increasing the poling voltage to 6 min or longer. e Time dependence of current density along the a and b axes as setting the poling bias +10 V. f The negative rectification along the a axis as the poling voltage is −10 V for 3 min. g The schematic diagram of physical mechanism illustrating the in-plane electrical anisotropy. NANOSENSORS™ conductive and wear resistant Platinum-Silicide PtSi-FM AFM probes were used for the low-temperature piezoresponse force microscopy.

In the field of modern information storage, the physical properties could act as the storage “medium”, such as electric polarization (dipole orientation) of ferroelectric materials,… Read More »Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6