電気的特性評価

Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2

Figure 3 from Mariola O Ramirez et al. 2024 “Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2”: c) Dark intensity-voltage (I–V) curves measured contacting the 1L-MoS2 by using two Pt-coated tips on a same single domain surface (blue) and both sides of a single domain wall (red). Schematics of the experimental configuration are shown in the right panels. Conductive NANOSENSORS™ AdvancedTEC™ ATEC-EFM tip-view AFM probes with a nominal stiffness of 2.8 N m−1 were used for the electrical characterization ensuring real tip visibility from above for a soft and accurate mechanical and electrical contact. To characterize the electrical properties of the system, the ATEC-EFM AFM probes were brought into direct contact with the MoS2 flakes please check the NANOSENSORS blogpost or the full article for the complete figure 3

In the last years, Transition Metal Dichalcogenides (TMDs) -based p-n junctions have been extensively studied and a variety of prototypes such as light-emitting diodes, photodetectors,… Read More »Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2