ATEC-EFM

Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2

Figure 3 from Mariola O Ramirez et al. 2024 “Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2”: c) Dark intensity-voltage (I–V) curves measured contacting the 1L-MoS2 by using two Pt-coated tips on a same single domain surface (blue) and both sides of a single domain wall (red). Schematics of the experimental configuration are shown in the right panels. Conductive NANOSENSORS™ AdvancedTEC™ ATEC-EFM tip-view AFM probes with a nominal stiffness of 2.8 N m−1 were used for the electrical characterization ensuring real tip visibility from above for a soft and accurate mechanical and electrical contact. To characterize the electrical properties of the system, the ATEC-EFM AFM probes were brought into direct contact with the MoS2 flakes please check the NANOSENSORS blogpost or the full article for the complete figure 3

In the last years, Transition Metal Dichalcogenides (TMDs) -based p-n junctions have been extensively studied and a variety of prototypes such as light-emitting diodes, photodetectors,… Read More »Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2

Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films

by NANOSENSORS
30 August 201815 March 2023
Science & Technology

Figure 1 from Borderon et al. Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films: Piezoelectric Force Microscopy (PFM) characterization of the epitaxial PZT thin films. The scan size is 2 μm×1 μm for the c-domain ample and 1 μm × 0.5 μm for the a/c-domain sample. PFM characterization done with ATEC-EFM AFM probe

A NANOSENSORS AdvancedTEC ATEC-EFM PtIr coated AFM probe was used for the piezo force microscopy (PFM) characterization in this interesting paper by Borderon et.al Domain… Read More »Domain wall motion in Pb(Zr0.20Ti0.80)O3 epitaxial thin films