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Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and the dwell time impact on the etch profile and topographical changes in SiO2 substrates

Figure 4 from Aleksandra Szkudlarek et al 2024 “Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates” : Results of in situ AFM measurements of the etched lines on the SiO2/Si substrate as a function of the dwell time: A) AFM profiles of lines etched with different dwell times (td = 1, 10, and100 μs); B) 3D AFM image of the SiO2 surface. The AFM-in-SEM approach allows for in situ analysis. Thus, the graphene could be modified and immediately measured by AFM without changing the environment. The analysis was performed by using the tapping mode and the NANOSENSORS self-sensing self-actuating Akiyama probe.

Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. * Although many years have passed since its discovery,… Read More »Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and the dwell time impact on the etch profile and topographical changes in SiO2 substrates